onsemi EMF23XV6T5

onsemi · Transistors (BJTs) · MPN EMF23XV6T5

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)140MHz
Emitter-Base Voltage VEBO6V
Vce Saturation(VCE(sat))250mV
typeNPN+PNP
Number1 NPN + 1 PNP
Pd - Power Dissipation500mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

1 NPN + 1 PNP 500mW 100mA 50V Bipolar Transistor Arrays, Pre-Biased RoHS

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