onsemi DTD113E

onsemi · Transistors (BJTs) · MPN DTD113E

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))250mV
typeNPN
Number1 NPN

Technical details

50V NPN 1 NPN Single, Pre-Biased Bipolar Transistors

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