onsemi · Transistors (BJTs) · MPN DTC123JET1G
No reviews yet — be the first to review onsemi DTC123JET1G.
| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 80 |
| Vce Saturation(VCE(sat)) | 250mV |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Output Voltage(VO(on)) | 200mV |
| Input Resistor | 2.9kΩ |
| Resistor Ratio | 0.056 |
| Pd - Power Dissipation | 200mW |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,0.3V |
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SC-75(SOT-416)