onsemi DTC115EM3T5G

onsemi · Transistors (BJTs) · MPN DTC115EM3T5G

No reviews yet — be the first to review onsemi DTC115EM3T5G.

Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
DC Current Gain80
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))200mV
Input Resistor100kΩ
Resistor Ratio1
Pd - Power Dissipation260mW
Voltage - Input(Max)(VI(off))1.2V
Input Voltage (VI(on)@Ic,Vce)3V@1mA,0.3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 260mW Surface Mount SOT-723

Related Transistors (BJTs)