onsemi DTC114EET1G

onsemi · Transistors (BJTs) · MPN DTC114EET1G

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
DC Current Gain35
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))200mV
Input Resistor10kΩ
Resistor Ratio1
Pd - Power Dissipation200mW
Voltage - Input(Max)(VI(off))1.2V
Input Voltage (VI(on)@Ic,Vce)2.5V@10mA,0.3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SC-75(SOT-416)

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