onsemi DTB113E

onsemi · Transistors (BJTs) · MPN DTB113E

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
Vce Saturation(VCE(sat))200mV
Current - Collector(Ic)100mA
typePNP
Number1 PNP
Pd - Power Dissipation350mW

Technical details

50V 100mA PNP 1 PNP 350mW Single, Pre-Biased Bipolar Transistors

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