onsemi DTA143TET1G

onsemi · Transistors (BJTs) · MPN DTA143TET1G

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
DC Current Gain160
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))200mV
Input Resistor4.7kΩ
typePNP
Number1 PNP Pre-Biased
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)1.3V@10mA,0.3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SC-75(SOT-416)

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