onsemi DTA124EM3T5G

onsemi · Transistors (BJTs) · MPN DTA124EM3T5G

No reviews yet — be the first to review onsemi DTA124EM3T5G.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO-
DC Current Gain100
Vce Saturation(VCE(sat))250mV@10mA,0.3mA
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor22kΩ
Resistor Ratio1
Pd - Power Dissipation260mW

Technical details

50V 100 100mA 260mW PNP 1 PNP Pre-Biased SOT-723-3 Single, Pre-Biased Bipolar Transistors RoHS

Related Transistors (BJTs)