onsemi DTA114YM3T5G

onsemi · Transistors (BJTs) · MPN DTA114YM3T5G

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
DC Current Gain140
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))200mV
Input Resistor10kΩ
Resistor Ratio0.21
Pd - Power Dissipation260mW
Voltage - Input(Max)(VI(off))700mV
Input Voltage (VI(on)@Ic,Vce)1.4V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 260mW Surface Mount SOT-723

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