onsemi D44VH10G

onsemi · Transistors (BJTs) · MPN D44VH10G

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO7V
DC Current Gain35
Pd - Power Dissipation83W
Configuration-
Number1 NPN
typeNPN
Current - Collector(Ic)15A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor NPN+PNP 80V 15A 50MHz 83W Through Hole TO-220

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