onsemi CPH5524-TL-E

onsemi · Transistors (BJTs) · MPN CPH5524-TL-E

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Specifications

Current - Collector Cutoff1uA
DC Current Gain200
Pd - Power Dissipation900mW
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)380MHz
Vce Saturation(VCE(sat))130mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)6A
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 50V 6A 380MHz 0.9W Surface Mount SOT-23-5

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