onsemi CPH3116-TL-E

onsemi · Transistors (BJTs) · MPN CPH3116-TL-E

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)420MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation900mW
Number1 PNP
typePNP
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))130mV

Technical details

Bipolar (BJT) Transistor PNP 50V 1A 420MHz Surface Mount CPH-3

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