onsemi BUV21G

onsemi · Transistors (BJTs) · MPN BUV21G

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Specifications

Current - Collector Cutoff3mA
Transition frequency(fT)8MHz
Collector - Emitter Voltage VCEO200V
Emitter-Base Voltage VEBO7V
DC Current Gain20
Pd - Power Dissipation250W
Number1 NPN
typeNPN
Current - Collector(Ic)40A
Vce Saturation(VCE(sat))1.5V
Operating Temperature-65℃~+200℃

Technical details

200V 20 1 NPN NPN 40A TO-204-2 Single Bipolar Transistors RoHS

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