onsemi BSS64LT1G

onsemi · Transistors (BJTs) · MPN BSS64LT1G

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Specifications

Current - Collector Cutoff500uA
Transition frequency(fT)60MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain20
Pd - Power Dissipation225mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))150mV

Technical details

Bipolar (BJT) Transistor NPN 80V 100mA 60MHz 225mW Surface Mount SOT-23

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