onsemi BSS63LT1G

onsemi · Transistors (BJTs) · MPN BSS63LT1G

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Specifications

Current - Collector Cutoff6nA
Transition frequency(fT)95MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO6V
DC Current Gain30
Pd - Power Dissipation225mW
Configuration-
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

Bipolar (BJT) Transistor PNP 100V 100mA 95MHz 225mW Surface Mount SOT-23

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