onsemi BSP52T1G

onsemi · Transistors (BJTs) · MPN BSP52T1G

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO80V
DC Current Gain2000
Pd - Power Dissipation800mW
typeNPN
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃@(Tj)
Vce Saturation(VCE(sat))1.3V

Technical details

80V 2000 NPN 1A SOT-223 Single Bipolar Transistors RoHS

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