onsemi BSP16T1G

onsemi · Transistors (BJTs) · MPN BSP16T1G

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)15MHz
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO6V
DC Current Gain30
Pd - Power Dissipation1.5W
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))2V

Technical details

300V 30 1 PNP PNP 100mA SOT-223-4 Single Bipolar Transistors RoHS

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