onsemi BDX53BG

onsemi · Transistors (BJTs) · MPN BDX53BG

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Specifications

Current - Collector Cutoff200uA
Emitter-Base Voltage VEBO5V
DC Current Gain750
Pd - Power Dissipation65W
typeNPN
Current - Collector(Ic)12A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))2V

Technical details

750 NPN 12A TO-220 Single Bipolar Transistors RoHS

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