onsemi BDV64BG

onsemi · Transistors (BJTs) · MPN BDV64BG

No reviews yet — be the first to review onsemi BDV64BG.

Specifications

Current - Collector Cutoff-
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
DC Current Gain1000
Pd - Power Dissipation125W
typePNP
Current - Collector(Ic)10A
Vce Saturation(VCE(sat))2V
Operating Temperature-65℃~+150℃@(Tj)

Technical details

100V 1000 PNP 10A TO-247-3 Single Bipolar Transistors RoHS

Related Transistors (BJTs)