onsemi BD682S

onsemi · Transistors (BJTs) · MPN BD682S

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
DC Current Gain750
Pd - Power Dissipation14W
typePNP
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))2.5V
Operating Temperature-

Technical details

100V 750 PNP 4A TO-126-3 Single Bipolar Transistors RoHS

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