onsemi BD679AS

onsemi · Transistors (BJTs) · MPN BD679AS

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)-
Collector - Emitter Voltage VCEO80V
DC Current Gain750
Pd - Power Dissipation40W
typeNPN
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))2.8V
Operating Temperature-

Technical details

80V 750 NPN 4A TO-126-3 Single Bipolar Transistors RoHS

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