onsemi BD439G

onsemi · Transistors (BJTs) · MPN BD439G

No reviews yet — be the first to review onsemi BD439G.

Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain30
Pd - Power Dissipation36W
typeNPN
Current - Collector(Ic)4A
Operating Temperature-
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor NPN 45V 4A 3MHz 36W Through Hole TO-225

Related Transistors (BJTs)