onsemi BD436G

onsemi · Transistors (BJTs) · MPN BD436G

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)3MHz
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation36W
typePNP
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

PNP 4A Single Bipolar Transistors RoHS

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