onsemi BD237G

onsemi · Transistors (BJTs) · MPN BD237G

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain40
Pd - Power Dissipation25W
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))600mV

Technical details

Bipolar (BJT) Transistor NPN 80V 2A 3MHz 25W Through Hole TO-225-3

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