onsemi BD13916STU

onsemi · Transistors (BJTs) · MPN BD13916STU

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain25
Pd - Power Dissipation12.5W
typeNPN
Current - Collector(Ic)1.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 80V 1.5A 12.5W Through Hole TO-126-3

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