onsemi · Transistors (BJTs) · MPN BD137G
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| Current - Collector Cutoff | 10uA |
|---|---|
| Collector - Emitter Voltage VCEO | 60V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 25 |
| Pd - Power Dissipation | 12.5W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 1.5A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 500mV |
Bipolar (BJT) Transistor NPN 60V 1.5A 12.5W Through Hole TO-126-3