onsemi BCW70LT1G

onsemi · Transistors (BJTs) · MPN BCW70LT1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain215
Pd - Power Dissipation225mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor PNP 45V 100mA 225mW Surface Mount SOT-23

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