onsemi BCW68GLT1G

onsemi · Transistors (BJTs) · MPN BCW68GLT1G

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Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain120
Pd - Power Dissipation300mW
Number1 PNP
typePNP
Current - Collector(Ic)800mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))700mV

Technical details

Bipolar (BJT) Transistor PNP 45V 800mA 100MHz 300mW Surface Mount SOT-23

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