onsemi BCW66GLT3G

onsemi · Transistors (BJTs) · MPN BCW66GLT3G

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Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
DC Current Gain160
Pd - Power Dissipation300mW
typeNPN
Current - Collector(Ic)800mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))-

Technical details

45V 160 NPN 800mA SOT-23 Single Bipolar Transistors RoHS

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