onsemi BC858BDW1T1

onsemi · Transistors (BJTs) · MPN BC858BDW1T1

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Specifications

Current - Collector Cutoff15nA
Pd - Power Dissipation150mW
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)100MHz
typePNP
Number2 PNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

150mW 30V PNP 100mA Bipolar Transistor Arrays

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