onsemi · Transistors (BJTs) · MPN BC857CDW1T1G
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| Current - Collector Cutoff | 4uA |
|---|---|
| DC Current Gain | 270 |
| Pd - Power Dissipation | 250mW |
| Collector - Emitter Voltage VCEO | 45V |
| Emitter-Base Voltage VEBO | 5V |
| Transition frequency(fT) | 100MHz |
| Vce Saturation(VCE(sat)) | 650mV |
| type | PNP |
| Number | 2 PNP |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 250mW Surface Mount SOT-363