onsemi BC848CDXV6T1

onsemi · Transistors (BJTs) · MPN BC848CDXV6T1

No reviews yet — be the first to review onsemi BC848CDXV6T1.

Specifications

Current - Collector Cutoff15nA
Pd - Power Dissipation500mW
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)100MHz
typeNPN
Vce Saturation(VCE(sat))600mV
Number2 NPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

500mW 30V NPN 100mA Bipolar Transistor Arrays RoHS

Related Transistors (BJTs)