onsemi · Transistors (BJTs) · MPN BC848CDW1T1G
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| Current - Collector Cutoff | 5uA |
|---|---|
| DC Current Gain | 270 |
| Pd - Power Dissipation | 380mW |
| Collector - Emitter Voltage VCEO | 30V |
| Emitter-Base Voltage VEBO | 5V |
| Transition frequency(fT) | 100MHz |
| Vce Saturation(VCE(sat)) | 250mV |
| type | NPN |
| Number | 2 NPN |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor NPN 30V 100mA 100MHz 380mW Surface Mount SOT-363