onsemi BC847CDXV6T1G

onsemi · Transistors (BJTs) · MPN BC847CDXV6T1G

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Specifications

Current - Collector Cutoff15nA
DC Current Gain270
Collector - Emitter Voltage VCEO45V
Pd - Power Dissipation500mW
Emitter-Base Voltage VEBO6V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))600mV
typeNPN
Number2 NPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 500mW Surface Mount SOT-563

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