onsemi BC847BPDW1T1G

onsemi · Transistors (BJTs) · MPN BC847BPDW1T1G

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Specifications

Current - Collector Cutoff5uA
DC Current Gain150
Pd - Power Dissipation380mW
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))100mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 45V 100mA 100MHz 380mW Surface Mount SOT-363

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