onsemi BC817-40WT1G

onsemi · Transistors (BJTs) · MPN BC817-40WT1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain250
Pd - Power Dissipation460mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))700mV

Technical details

Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 460mW Surface Mount SC-70

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