onsemi BC807-40WT1G

onsemi · Transistors (BJTs) · MPN BC807-40WT1G

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Specifications

Current - Collector Cutoff5uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain250
Pd - Power Dissipation460mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))700mV

Technical details

Bipolar (BJT) Transistor PNP 45V 500mA 100MHz 460mW Surface Mount SC-70(SOT-323)

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