onsemi 50C02CH-TL-E

onsemi · Transistors (BJTs) · MPN 50C02CH-TL-E

No reviews yet — be the first to review onsemi 50C02CH-TL-E.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)500MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain300
Pd - Power Dissipation700mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))50mV

Technical details

Bipolar (BJT) Transistor NPN 50V 500mA 500MHz 700mW Surface Mount CPH-3

Related Transistors (BJTs)