onsemi 50A02CH-TL-E

onsemi · Transistors (BJTs) · MPN 50A02CH-TL-E

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)690MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation700mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))60mV

Technical details

Bipolar (BJT) Transistor PNP 50V 500mA 690MHz 700mW Surface Mount SC-59-3

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