onsemi 30C02S-TL-E

onsemi · Transistors (BJTs) · MPN 30C02S-TL-E

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)540MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation600mW
Number1 NPN
typeNPN
Current - Collector(Ic)700mA
Vce Saturation(VCE(sat))190mV

Technical details

30V 1 NPN NPN 700mA Single Bipolar Transistors RoHS

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