onsemi 30A02CH-TL-E

onsemi · Transistors (BJTs) · MPN 30A02CH-TL-E

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)520MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation700mW
Number1 PNP
typePNP
Current - Collector(Ic)700mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))110mV

Technical details

30V 200 1 PNP PNP 700mA CPH-3 Single Bipolar Transistors RoHS

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