onsemi 2SD863E-AE

onsemi · Transistors (BJTs) · MPN 2SD863E-AE

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation900mW
Number1 NPN + 1 PNP
typeNPN+PNP
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))700mV

Technical details

50V 1 NPN + 1 PNP NPN+PNP 1A Single Bipolar Transistors RoHS

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