onsemi · Transistors (BJTs) · MPN 2SD1626-TD-E
4.0/5 from 1 engineer review.
| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 120MHz |
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 4000 |
| Pd - Power Dissipation | 500mW |
| type | NPN |
| Current - Collector(Ic) | 1.5A |
| Vce Saturation(VCE(sat)) | 1.5V |
| Operating Temperature | - |
50V 4000 NPN 1.5A TO-243AA Single Bipolar Transistors RoHS