onsemi 2SD1145G-AE

onsemi · Transistors (BJTs) · MPN 2SD1145G-AE

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation900mW
Current - Collector(Ic)5A
Vce Saturation(VCE(sat))500mV

Technical details

20V 5A Single Bipolar Transistors RoHS

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