onsemi 2SD1062R

onsemi · Transistors (BJTs) · MPN 2SD1062R

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)10MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation40W
typeNPN+PNP
Current - Collector(Ic)12A

Technical details

50V NPN+PNP 12A Single Bipolar Transistors RoHS

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