onsemi 2SD1061R

onsemi · Transistors (BJTs) · MPN 2SD1061R

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)10MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation40W
Number1 NPN
typeNPN
Current - Collector(Ic)7A
Vce Saturation(VCE(sat))400mV

Technical details

50V 1 NPN NPN 7A Single Bipolar Transistors RoHS

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