onsemi 2SD1060S-1E

onsemi · Transistors (BJTs) · MPN 2SD1060S-1E

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain140
Pd - Power Dissipation1.75W
typeNPN
Current - Collector(Ic)5A
Operating Temperature-
Vce Saturation(VCE(sat))300mV

Technical details

50V 140 NPN 5A TO-220 Single Bipolar Transistors RoHS

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