onsemi 2SC6096-TD-E

onsemi · Transistors (BJTs) · MPN 2SC6096-TD-E

No reviews yet — be the first to review onsemi 2SC6096-TD-E.

Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO6.5V
DC Current Gain300
Pd - Power Dissipation3.5W
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))150mV

Technical details

Bipolar (BJT) Transistor NPN 100V 2A 300MHz 3.5W Surface Mount SOT-89

Related Transistors (BJTs)