onsemi 2SC6017-TL-E

onsemi · Transistors (BJTs) · MPN 2SC6017-TL-E

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation20W
Number1 NPN
typeNPN
Current - Collector(Ic)10A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))360mV

Technical details

Bipolar (BJT) Transistor NPN 50V 10A 200MHz 20W Surface Mount TO-252-2(DPAK)

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