onsemi · Transistors (BJTs) · MPN 2SC5706-E
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| Current - Collector Cutoff | 1uA |
|---|---|
| Transition frequency(fT) | 400MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 200 |
| Pd - Power Dissipation | 800mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 5A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 135mV |
50V 200 1 NPN NPN 5A TO-251-3 Single Bipolar Transistors RoHS